Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles
نویسندگان
چکیده
We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of electrons in the same particle, (b) greatly improved resolution and qualitatively new results for spectra within superconducting particles, and (c) detailed studies of the gate-voltage dependence of the resonance level widths, which have directly demonstrated the effects of nonequilibrium excitations. [S0031-9007(97)03240-7]
منابع مشابه
Rectification Ratio Enhancement and Functionalized Pyrene: DFT+NEGF
Electron transport properties of pure and Oxygen and/or Methyl substituted pyrene between two semi-infinite Aluminum atomic electrodes have been investigated by means of density functional theory plus the non-equilibrium green’s function method. The electrodes were represented by a slab of Al atoms oriented along the [111] plane. The computations were carried out in the bias voltage range of 0....
متن کاملThe Effect of Aluminum, Gallium, Indium- Doping on the Zigzag (5, 0) Boron-Nitride Nanotubes: DFT, NMR, Vibrational, Thermodynamic Parameters and Electrostatic Potential Map with Electrophilicity Studies
Influence of Aluminum, Gallium, Indium- Doping on the Boron-Nitride Nanotubes (BNNTs) investigated with density functional theory (DFT) and Hartreefock (HF) methods. For this purpose, the chemical shift of difference atomic nucleus was studied using the gauge included atomic orbital (GIAO) approch. In the following, structural parameter values, electrostatic potential, thermodynamic parameters,...
متن کاملHigh Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator
The use of aluminum oxide as the gate insulator for low temperature (<600C) polycrystalline SiGe thin film transistors (TFTs) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N20 plasma. The composition of the deposited aluminum oxide was found to be almost stoichiomertic (i.e. Al2O3), with a very small fraction of nitrogen incorporation. Even with...
متن کاملAn Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors
In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...
متن کاملReconfigurable logic in nanoelectronic switching networks
We demonstrate how to configure and reconfigure a nanoelectronic nonlinear network to a universal set of logic gates by applying sequences of voltage pulses to the edges of the network. The nanoelectronic device is designed to consist of a self-assembled network of nanoparticles connected by two-terminal linker elements with hysteretic behaviour, allowing voltage-controlled switching between a ...
متن کامل